200 a fast thyristor/ diode and thyristor/ thyristor bulletin i27099 rev. a 10/97 1 irk.f200.. series magn-a-pak ? power modules www.irf.com features fast turn-off thyristor fast recovery diode high surge capability electrically isolated baseplate 3000 v rms isolating voltage industrial standard package ul e78996 approved description these series of magn-a-pak modules are intended for applications such as self-commutated inverters, dc choppers, electronic welders, induction heating and others where fast switching characteristics are required. parameters irk.f200.. units i t(av) 200 a @ t c 85 c i t(rms) 444 a i tsm @ 50hz 7600 a @ 60hz 8000 a i 2 t @ 50hz 290 ka 2 s @ 60hz 265 ka 2 s i 2 ? t 2900 ka 2 ? s t q 20 and 25 s t rr 2s v drm / v rrm up to 1200 v t j range - 40 to 125 o c major ratings and characteristics
irk.f200.. series 2 bulletin i27099 rev. a 10/97 www.irf.com electrical specifications voltage ratings voltage v rrm /v drm , maximum repetitive v rsm , maximum non- i rrm /i drm max. type number code peak reverse voltage repetitive peak rev. voltage @ t j = 125c vvma 08 800 800 12 1200 1200 i t(av) maximum average on-state current 200 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) maximum rms current 444 a as ac switch i tsm maximum peak, one-cycle, 7600 a t = 10ms no voltage non-repetitive surge current 8000 t = 8.3ms reapplied 6400 t = 10ms 100% v rrm 6700 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 290 ka 2 s t = 10ms no voltage initial t j = 125c 265 t = 8.3ms reapplied 205 t = 10ms 100% v rrm 187 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 2900 ka 2 ? s t = 0 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage 1.18 v (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. v t(to)2 high level value of threshold voltage 1.25 (i > p x i t(av) ), t j = t j max. r t1 low level value of on-state slope resistance 0.74 mw (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. r t2 high level value of on-state slope resistance 0.70 (i > p x i t(av) ), t j = t j max. v tm maximum on-state voltage drop 1.73 v i pk = 600a, t j = t j max., t p = 10ms sine pulse i h maximum holding current 600 ma t j = 25c, i t > 30 a i l typical latching current 1000 ma t j = 25c, v a = 12v, ra = 6 w , ig = 1a parameter irk.f200.. units conditions on-state conduction frequency f units 50hz 380 560 630 850 2460 3180 a 400hz 460 690 710 1060 1570 2080 a 2500hz 310 450 530 760 630 860 a 5000hz 250 360 410 560 410 560 a 10000hz 180 280 300 410 - - a recovery voltage vr 50 50 50 50 50 50 v voltage before turn-on vd 80% v drm 80% v drm 80% v drm v rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 85 60 85 60 85 60 c equivalent values for rc circuit 10 w /0.47 m f10 w /0.47 m f10 w /0.47 m f i tm i tm 180 o el 100s i tm 180 o el current carrying capacity irk.f200- 50
irk.f200.. series 3 bulletin i27099 rev. a 10/97 www.irf.com t j max. junction operating temperature range - 40 to 125 c t stg max. storage temperature range - 40 to 150 r thjc max. thermal resistance, junction to 0.125 k/w per junction, dc operation case r thc-hs max. thermal resistance, case to 0.025 k/w mounting surface flat and greased heatsink per module t mounting torque 10% map to heatsink 4 - 6 (35 - 53) nm busbar to map 4 - 6 (35 - 53) (lb*in) wt approximate weight 500 (17.8) g (oz) dv/dt maximum critical rate of rise of off-state 1000 v/s t j = 125c., exponential to = 67% v drm voltage v ins rms isolation voltage 3000 v 50 hz, circuit to base, t j = 25c, t = 1 s i rrm maximum peak reverse and off-state 50 ma t j = 125c, rated v drm /v rrm applied i drm leakage current parameter irk.f200.. units conditions blocking di/dt maximum non-repetitive rate of rise 800 a/s gate drive 20v, 20 w , tr 1ms, v d = 80% v drm t j = 25c t rr maximum recovery time 2 s i tm = 350a, di/dt = -25a/s, v r = 50v, t j = 25c t q maximum turn-off time k j i tm = 750a, t j = 125c, di/dt = -25a/s, 20 25 s v r = 50v, dv/dt = 400v/s linear to 80% v drm parameter irk.f200.. units conditions switching parameter irk.f200.. units conditions triggering p gm maximum peak gate power 60 w f = 50 hz, d% = 50 p g(av) maximum peak average gate power 10 w t j = 125c, f = 50hz, d% = 50 i gm maximum peak positive gate current 10 a t j = 125c, t p < 5ms - v gm maximum peak negative gate voltage 5 v i gt max. dc gate current required to trigger 200 ma t j = 25c, v ak 12v, ra = 6 v gt dc gate voltage required to trigger 3 v i gd dc gate current not to trigger 20 ma t j = 125c, rated v drm applied v gd dc gate voltage not to trigger 0.25 v parameter irk.f200.. units conditions thermal and mechanical specifications a mounting compound is recommended. the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. use of cable lugs is not recommendd, busbars should be used and restrained during tightening. threads must be lubricated with a compound
irk.f200.. series 4 bulletin i27099 rev. a 10/97 www.irf.com d r thjc conduction (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc) conduction angle sinusoidal conduction rectangular conduction units conditions 180 0.009 0.006 k/w t j = 125c 120 0.010 0.011 90 0.014 0.015 60 0.020 0.020 30 0.032 0.033 irktf200-12hkn 1 2 3 1 - module type 2 - circuit configuration 3 - fast scr 4 - current rating: i t(av) x 10 rounded 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - dv/dt code: h 400v/s 7 -t q code: k 20s j 25s 8 - none = standard devices n = aluminum nitrade substrate 4 device code ordering information table 5 6 7 8 note: to order the optional hardware see bulletin i27900
irk.f200.. series 5 bulletin i27099 rev. a 10/97 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics irklf.. irkuf.. irkvf.. irkkf.. irknf.. irkhf.. irktf.. - all dimensions in millimeters (inches) - dimensions are nominal - full engineering drawings are available on request - ul identification number for gate and cathode wire: ul 1385 - ul identification number for package: ul 94v0 outline table 60 70 80 90 100 110 120 130 0 40 80 120 160 200 24 0 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction angle irk.f200.. series r (dc) = 0.125 k/w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 35 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.f200.. series r (dc) = 0.125 k/w thjc
irk.f200.. series 6 bulletin i27099 rev. a 10/97 www.irf.com fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 6 - maximum non-repetitive surge current fig. 5 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 35 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.f200.. series per junction t = 125c j 3000 4000 5000 6000 7000 11010 0 number of equal amplitude half cycle current pulses (n ) peak half sine wave on-state current (a ) irk.f200.. series per junction initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 3000 4000 5000 6000 7000 8000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s ) maximum non repetitive surge curren t versus pulse train duration. contro l of conduction may not be maintained . irk.f200.. series per junction in itial t = 125 c no voltage reapplied rated v reapplied rrm j 100 1000 10000 123456 7 t = 25 c j instantaneous on-state current (a) instantaneo us on-state voltage (v) irk.f200.. series per junction t = 125c j 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 10 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w) steady state value: r = 0.125 k/w (dc operation) irk.f200.. series per junction thjc 0 50 100 150 200 250 300 350 0 40 80 120 160 20 0 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 irk.f200.. series per junction t = 125c j
irk.f200.. series 7 bulletin i27099 rev. a 10/97 www.irf.com fig. 9 - reverse recovery charge characteristics fig. 10 - reverse recovery current characteristics fig. 11 - frequency characteristics fig. 12 - frequency characteristics 30 60 90 120 150 180 10 20 30 40 50 60 70 80 90 10 0 500a 300a 200a 100a maximum reverse recovery current - irr (a ) rate of fall of forward current - di/dt (a/ s ) irk.f200.. series t = 125c i = 1000a j tm 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 10 0 300 a 200 a 100 a 500 a maximum reverse recovery charge - qrr ( c ) rate of fall of forward current - di/dt (a/ s ) i = 1000 a irk.f200.. series t = 125c tm j 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 5000 150 2500 peak on-stata current (a) pulse basewidth ( s) irk.f200.. series sinusoid al pu lse t = 85 c snubber circuit r = 10 ohm s c = 0.47 f v = 80% v tp 1e4 drm c s s d 1 e1 1e2 1e3 1e 4 50 hz 400 1000 5000 150 2500 pulse basewidth ( s) snubber ci rcuit r = 10 ohms c = 0.47 f v = 80% v irk .f 200.. series sinusoid al pu lse t = 60c tp 1e1 c drm s s d 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 5000 150 2500 pulse basewidth ( s) peak on-state cur ren t (a) irk.f200.. series trapezoidal pulse t = 85 c di/dt 50a/s snubber circuit r = 10 ohms c = 0. 47 f v = 80% v 1e4 tp drm c s s d 1 e 11e21e31e 4 50 h z 400 1000 5000 150 2500 pulse basewidth ( s) snubber circuit r = 10 ohms c = 0.47 f v = 80% v irk.f200.. series trapezoid al p ulse t = 85c di/dt 100a/s 1e1 tp drm s s d c
irk.f200.. series 8 bulletin i27099 rev. a 10/97 www.irf.com fig. 13 - frequency characteristics fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 5000 150 2500 peak on-state current (a) pulse basewidth ( s) snubber circuit r = 10 ohms c = 0.47 f v = 80% v irk.f200.. series trap ezoida l pulse t = 60c di/dt 50a/s 1e4 tp drm c s s d 1 e 11e21e31e 4 50 hz 400 1000 5000 150 2500 pulse basewidth ( s) irk.f200.. series trapezoida l pu lse t = 60 c di/dt 100a/s snubber circuit r = 10 ohms c = 0.47 f v = 80% v 1e1 tp drm c s s d 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 10 j ou les per p ulse 5 2.5 1 0.5 0.25 0.1 0.05 peak on-state current (a) pulse basewidth ( s) irk.f200.. series sinusoidal pulse tp 1e4 1 e 11e21e31e 4 10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05 pulse basewidth ( s) irk .f 200.. series tra pezoid al pu lse di/dt 50a/ s tp 1e1 0.1 1 10 100 0.01 0.1 1 10 10 0 vgd igd (b) (a) tj =25 c tj =12 5 c tj=- 40 c (2 ) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse rated di/dt : 10v, 10ohms <=30% rated di/dt : 10v, 20ohms irk.f200.. series frequency limited by pg(av) (1) pgm = 8w, tp = 25ms (2) pgm = 20w, tp = 1ms (3) pgm = 40w, tp = 5ms (4) pgm = 80w, tp = 2.5ms (1) (4)
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